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MUN5214DW1T1G

Bipolar Transistors Pre Biased SS BR XSTR NPN 50V

NPN Transistors with Monolithic Bias Resistor Network - SOT?363

MUN5214DW1T1G - ON Semiconductor
MUN5214DW1T1G Bipolar Transistors Pre Biased SS BR XSTR NPN 50V
Bipolar Transistors Pre Biased SS BR XSTR NPN 50VBipolar Transistors Pre Biased SS BR XSTR NPN 50V
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MUN5214DW1T1G

Bipolar Transistors Pre Biased SS BR XSTR NPN 50V

NPN Transistors with Monolithic Bias Resistor Network - SOT?363

Garantia:
12 meses direto com a Net Computadores

NCM:
85423190

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R$ 5,50

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R$ 5,50

À vista já com 10% de desconto (boleto/pix). Preço base SP. Informaremos caso incidam impostos interestaduais.

ou R$ 6,11 no cartão de crédito em até 10x sem juros

Condição exclusiva para compras presenciais na loja física.

R$ 5,50

à vista no pix

Condição: novo em embalagem comercial

Garantia: 12 meses direto com a Net Computadores

NCM: 85423190


MUN5214DW1T1G Bipolar Transistors Pre Biased SS BR XSTR NPN 50V

Condição de MUN5214DW1T1G: novo em embalagem comercial

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
 
 
Manufacturer: onsemi
Product Category: Bipolar Transistors - Pre-Biased
   
Configuration: Dual
Transistor Polarity: NPN
Typical Input Resistor: 10 kOhms
Typical Resistor Ratio: 0.21
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 100 mA
Peak DC Collector Current: 100 mA
Pd - Power Dissipation: 256 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 150 C
Series: MUN5214DW1
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: onsemi
DC Current Gain hFE Max: 80
Height: 0.9 mm
Length: 2 mm
Product Type: BJTs - Bipolar Transistors - Pre-Biased

MUN5214DW1T1G Bipolar Transistors Pre Biased SS BR XSTR NPN 50V


Condição de MUN5214DW1T1G: novo em embalagem comercial

Tags de MUN5214DW1T1G: MUN5214DW1, NSBC114YDXV6, NSBC114YDP6, MUN5214DW1T1G, NSBA114EDxx, NSBA114ED, ci 6 terminais, transistor 6 terminais, SOT?363, SOT363, SOT-363, ci 7DM, IC 7DM,, ON Semiconductor

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