BLM8D1822S-50PBG Ampleon LDMOS 2 stage integrated Doherty MMI 16HSOP

BLM8D1822S-50PBG Ampleon LDMOS 2 stage integrated Doherty MMI 16HSOP Frequency 1.805 to 2.17GHz for Base Station 3G/WCDMA/GSM/4G/LTE

Condição de BLM8D1822S-50PBG:
Novo em embalagem comercial

Garantia  de  BLM8D1822S-50PBG:
3 meses direto com a Net Computadores

Outros PNs para este componente:     BLM8D1822S-50PBGY

• RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
  • Dual section or single ended
  • Quadrature combined
  • Push-pull

• Transistor Type: LDMOS
  
• Technology: Si
  
• Application Industry: Wireless Infrastructure, RF Energy
  
• Application: Base Station, 3G / WCDMA, GSM, 4G / LTE
  
• CW/Pulse: Pulse, CW
  
• Frequency: 1.805 to 2.17 GHz
  
• Power: 46.98 dBm
  
•  Power (W) / 49.89W
  
•  P1dB: 46.98 dBm
  
• Pulsed Width: 100 us
  
• Duty_Cycle: 0.1
  
• Power Gain (Gp): 24.5 to 28.5 dB
  
• Input Return Loss: -19 to -10 dB
  
• VSWR: 10.00:1
  
• Class: AB
  
• Supply Voltage: 28 V
  
• Breakdown Voltage - Drain-Source: 65 V
  
• Voltage - Gate-Source (Vgs): -0.5 to 13 V
  
• Drain Current: 104 mA
  
• Package Type: Surface Mount
  
• Package: SOT1212-2
  
• RoHS: Yes
  
• Storage Temperature: -65 to 150 Degree C
  

Maiores detalhes de BLM8D1822S-50PBG no site do fabricante:
https://www.ampleon.com/documents/data-sheet/BLM8D1822S-50PB_S-50PBG.pdf

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