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CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44

CY62137EV30L - Cypress Perform
CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44
CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44
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CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44
CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44
CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44

R$ 36,00

à vista no Pix ou Boleto

ou R$ 37,37 em 1x no cartão (via site)

ou R$ 39,44 no cartão em até 10x sem juros (apenas na loja física)

R$ 36,00

à vista no Pix ou Boleto

R$ 37,37
em 1x no cartão (via site)

R$ 39,44 no cartão
em até 10x sem juros
(apenas na loja física)

Garantia:
3 meses direto com a Net Computadores

NCM:
84733042

R$ 36,00

à vista no pix

Condição:
Novo em embalagem comercial

Garantia:
3 meses direto com a Net Computadores

NCM: 84733042

CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44

Condição de CY62137EV30L:    Novo em embalagem comercial

Garantia  de  CY62137EV30L:     3 meses direto com a Net Computadores

Outros PNs para este item:     CY62137EV30LL-45ZSXI



Functional Description The CY62137EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life- (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling.
 
The device can also be put into standby mode reducing power consumption when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by asserting Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16).
 
If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by asserting Chip Enable (CE) and Output Enable (OE) LOW forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. The CY62137EV30 is available in 48-ball VFBGA and 44-pin TSOPII packages.
 
 
Features
- Very high speed: 45 ns
- Wide voltage range: 2.20 V to 3.60 V
- Pin compatible with CY62137CV30
- Ultra low standby power - Typical standby current: 1 -A - Maximum standby current: 7 -A
- Ultra low active power - Typical active current: 2 mA at f = 1 MHz
- Easy memory expansion with CE and OE features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Byte power-down feature
- Offered in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) package


Maiores detalhes de CY62137EV30L no site do fabricante:
https://www.infineon.com/dgdl/Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static


Tags de CY62137EV30L: CY62137EV30LL-45ZSXI, CY62137EV30L, chip de memoria 2MB, ci de memoria 2MB, eprom 2Mb, ic eprom 2MB, ci epprom 2mb, Cypress Perform

CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44

Condição de CY62137EV30L:
Novo em embalagem comercial

Garantia  de  CY62137EV30L:
3 meses direto com a Net Computadores

Outros PNs para este componente:     CY62137EV30LL-45ZSXI


Functional Description The CY62137EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life- (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling.
 
The device can also be put into standby mode reducing power consumption when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by asserting Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16).
 
If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by asserting Chip Enable (CE) and Output Enable (OE) LOW forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. The CY62137EV30 is available in 48-ball VFBGA and 44-pin TSOPII packages.
 
 
Features
- Very high speed: 45 ns
- Wide voltage range: 2.20 V to 3.60 V
- Pin compatible with CY62137CV30
- Ultra low standby power - Typical standby current: 1 -A - Maximum standby current: 7 -A
- Ultra low active power - Typical active current: 2 mA at f = 1 MHz
- Easy memory expansion with CE and OE features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Byte power-down feature
- Offered in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) package


Maiores detalhes de CY62137EV30L no site do fabricante:
https://www.infineon.com/dgdl/Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static


Tags de CY62137EV30L: CY62137EV30LL-45ZSXI, CY62137EV30L, chip de memoria 2MB, ci de memoria 2MB, eprom 2Mb, ic eprom 2MB, ci epprom 2mb, Cypress Perform

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CY62137EV30L 2Mbit 128K x 16 Static RAM 45NS TSOP-44