EM636165TS-7G Synchronous DRAM 1MX16 5.4ns CMOS PDSO50

Name: EM636165TS-7G Synchronous DRAM 1MX16 5.4ns CMOS PDSO50
Brand: Etron Techonology
SKU: EM636165TS-7G
Price: 21.00 BRL
Availability: InStock

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em 1x no cartão (via site)

R$ 22,78 no cartão
em até 10x sem juros
(apenas na loja física)

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3 meses direto com a Net Computadores

NCM:

85423190

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NCM: 85423190

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EM636165TS-7G Synchronous DRAM 1MX16 5.4ns CMOS PDSO50

Condição de EM636165TS-7G: Novo em embalagem comercial

Garantia de EM636165TS-7G: 3 meses direto com a Net Computadores

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh s, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications Features Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
Fast clock rate: 200/183/166/143/125/100 MHz
Self refresh mode: standard and low power
Internal pipelined architecture
512K word x 16-bit x 2-bank
Programmable Mode registers
- CAS# Latency: 1, 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop
Individual byte controlled by LDQM and UDQM
Auto Refresh and Self Refresh
4096 refresh cycles/64ms
CKE power down mode
JEDEC standard 3.3V0.3V power supply
Interface: LVTTL
50-pin 400 mil plastic TSOP II package
60-ball, 6.4x10.1mm VFBGA package
Lead Free Package available for both TSOP II and VFBGA

Tags de EM636165TS-7G: EM636165TS-7G, EM636165TS, ETRONTE, Etron Techonology

EM636165TS-7G Synchronous DRAM 1MX16 5.4ns CMOS PDSO50

Condição de EM636165TS-7G:
Novo em embalagem comercial

Garantia de EM636165TS-7G:
3 meses direto com a Net Computadores