FDMS3604S Mosfet Canal N Duplo 30V PQFN-8

Marcações no componente: DC10AJ, 22CA, DC10 22CA, N7CC

FDMS3604S Mosfet Canal N Duplo 30V PQFN-8

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R$ 15,00

à vista no Pix ou Boleto

R$ 14,96
em 1x no cartão (via site)

R$ 15,79 no cartão
em até 10x sem juros
(apenas na loja física)

Comprar

Condição:

Novo em embalagem comercial

Garantia:

3 meses direto com a Net Computadores

NCM:

85423190

R$ 15,00

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Comprar

Condição:
Novo em embalagem comercial

Garantia:
3 meses direto com a Net Computadores

NCM: 85423190

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FDMS3604S Mosfet Canal N Duplo 30V PQFN-8
Marcações no componente: DC10AJ, 22CA, DC10 22CA, N7CC

Condição de FDMS3604S: Novo em embalagem comercial

Garantia de FDMS3604S: 3 meses direto com a Net Computadores

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features
Q1: N-Channel
Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 m? at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 2.6 m? at VGS = 10 V, ID = 23 A
Max rDS(on) = 3.5 m? at VGS = 4.5 V, ID = 21 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant

Applications
Notebook PC

Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	Power-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	13 A, 23 A
Rds On - Drain-Source Resistance:	2.2 mOhms, 5.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V, 3 V
Qg - Gate Charge:	21 nC, 47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	150 C
Pd - Power Dissipation:	2.2 W, 2.5 W
Channel Mode:	Enhancement
Tradename:	Power Stage PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Dual
Fall Time:	2.2 ns, 3.4 ns
Forward Transconductance - Min:	61 S, 130 S
Height:	1.1 mm
Length:	6 mm
Product Type:	MOSFET
Rise Time:	2.5 ns, 4.8 ns
Series:	FDMS3604S

Maiores detalhes de FDMS3604S no site do fabricante:
https://www.onsemi.com/pdf/datasheet/fdms3604s-d.pdf

Vídeo de FDMS3604S Mosfet Canal N Duplo 30V PQFN-8

Tags de FDMS3604S: FDMS3604S, DC10AJ, $Y&Z&3&K, 22CA, DC10 22CA, N7CC, N-Channel POWERTRENCH Power Stage Asymetric Dual, Asymmetric Dual N-Channel PowerTrench Power Stage MOSFET 30V, mosfet duplo canal N, mosfet canal N duplo, ON Semiconductor

FDMS3604S Mosfet Canal N Duplo 30V PQFN-8 Marcações no componente: DC10AJ, 22CA, DC10 22CA, N7CC

Condição de FDMS3604S:
Novo em embalagem comercial

Garantia de FDMS3604S:
3 meses direto com a Net Computadores

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features
Q1: N-Channel
Max rDS(on) = 8 m- at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 m- at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 2.6 m- at VGS = 10 V, ID = 23 A
Max rDS(on) = 3.5 m- at VGS = 4.5 V, ID = 21 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant

Applications
Notebook PC

Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	Power-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	13 A, 23 A
Rds On - Drain-Source Resistance:	2.2 mOhms, 5.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V, 3 V
Qg - Gate Charge:	21 nC, 47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	150 C
Pd - Power Dissipation:	2.2 W, 2.5 W
Channel Mode:	Enhancement
Tradename:	Power Stage PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Dual
Fall Time:	2.2 ns, 3.4 ns
Forward Transconductance - Min:	61 S, 130 S
Height:	1.1 mm
Length:	6 mm
Product Type:	MOSFET
Rise Time:	2.5 ns, 4.8 ns
Series:	FDMS3604S