K4S561632E-TC75 Samsung DRAM Chip SDRAM 256Mbit 16Mx16

Name: K4S561632E-TC75 Samsung DRAM Chip SDRAM 256Mbit 16Mx16
Brand: Samsung
SKU: K4S561632E-TC75
Price: 16.00 BRL
Availability: InStock

3.3V 54-Pin 256Mb E-die SDRAM

clique para ampliar

*As imagens podem ser ilustrativas

em estoque, envio imediato

R$ 16,00

à vista no Pix ou Boleto

ou R$ 16,32 em 1x no cartão (via site)

ou R$ 17,22 no cartão em até 10x sem juros (apenas na loja física)

R$ 16,00

à vista no Pix ou Boleto

R$ 16,32
em 1x no cartão (via site)

R$ 17,22 no cartão
em até 10x sem juros
(apenas na loja física)

Comprar

Condição:

Novo em embalagem comercial

Garantia:

3 meses direto com a Net Computadores

NCM:

85423190

R$ 16,00

à vista no pix

Comprar

Condição:
Novo em embalagem comercial

Garantia:
3 meses direto com a Net Computadores

NCM: 85423190

Cotação PJ mais de uma unidade

Indicar K4S561632E-TC75

K4S561632E-TC75 Samsung DRAM Chip SDRAM 256Mbit 16Mx16
3.3V 54-Pin 256Mb E-die SDRAM

Condição de K4S561632E-TC75: Novo em embalagem comercial

Garantia de K4S561632E-TC75: 3 meses direto com a Net Computadores

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
? JEDEC standard 3.3V power supply
? LVTTL compatible with multiplexed address
? Four banks operation
? MRS cycle with address key programs
-. CAS latency (2 e 3)
-. Burst length (1, 2, 4, 8

Tags de K4S561632E-TC75: K4S561632E-TC75, K4S561632E, K4S561632, K4S560432E, K4S560832E, K4S561632E, chip de memoria SDRAM, memoria NAND, Samsung

K4S561632E-TC75 Samsung DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin 256Mb E-die SDRAM

Condição de K4S561632E-TC75:
Novo em embalagem comercial

Garantia de K4S561632E-TC75:
3 meses direto com a Net Computadores

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
- JEDEC standard 3.3V power supply
- LVTTL compatible with multiplexed address
- Four banks operation
- MRS cycle with address key programs
-. CAS latency (2 e 3)
-. Burst length (1, 2, 4, 8

Tags de K4S561632E-TC75: K4S561632E-TC75, K4S561632E, K4S561632, K4S560432E, K4S560832E, K4S561632E, chip de memoria SDRAM, memoria NAND, Samsung