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M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory

256KX8 FLASH 5V PROM 70ns PDSO32 8 x 20mm PLASTIC TSOP-32

M29F002BB70N1 - STMicroeletronics
M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory
M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory
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M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory

R$ 46,00

à vista no Pix ou Boleto

ou R$ 47,89 em 1x no cartão (via site)

ou R$ 50,56 no cartão em até 10x sem juros (apenas na loja física)

R$ 46,00

à vista no Pix ou Boleto

R$ 47,89
em 1x no cartão (via site)

R$ 50,56 no cartão
em até 10x sem juros
(apenas na loja física)

Garantia:
3 meses direto com a Net Computadores

NCM:
85423190

R$ 46,00

à vista no pix

Condição:
Novo em embalagem comercial

Garantia:
3 meses direto com a Net Computadores

NCM: 85423190

M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory
256KX8 FLASH 5V PROM 70ns PDSO32 8 x 20mm PLASTIC TSOP-32

Condição de M29F002BB70N1:    Novo em embalagem comercial

Garantia  de  M29F002BB70N1:     3 meses direto com a Net Computadores



- SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
- ACCESS TIME: 45 ns
- PROGRAMMING TIME - 8 µs by Byte typical
- 7 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 4 Main Blocks
 
- PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits
 
- ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend
- UNLOCK BYPASS PROGRAM COMMAND - Faster Production/Batch Programming
- TEMPORARY BLOCK UNPROTECTION MODE
- LOW POWER CONSUMPTION - Standby and Automatic Standby
- 100,000 PROGRAM/ERASE CYCLES per BLOCK
- 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year
- ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Top Device Code M29F002BT: B0h
- Top Device Code M29F002BNT: B0h
- Bottom Device Code M29F002BB: 34h
- Bottom Device Code M29F002BNB: 34h
 
SUMMARY DESCRIPTION
The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B is fully backward compatible with the M29F002. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards

Tags de M29F002BB70N1: M29F002BB70N1, M29F002B, STMicroeletronics

M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory 256KX8 FLASH 5V PROM 70ns PDSO32 8 x 20mm PLASTIC TSOP-32

Condição de M29F002BB70N1:
Novo em embalagem comercial

Garantia  de  M29F002BB70N1:
3 meses direto com a Net Computadores


- SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
- ACCESS TIME: 45 ns
- PROGRAMMING TIME - 8 µs by Byte typical
- 7 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 4 Main Blocks
 
- PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits
 
- ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend
- UNLOCK BYPASS PROGRAM COMMAND - Faster Production/Batch Programming
- TEMPORARY BLOCK UNPROTECTION MODE
- LOW POWER CONSUMPTION - Standby and Automatic Standby
- 100,000 PROGRAM/ERASE CYCLES per BLOCK
- 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year
- ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Top Device Code M29F002BT: B0h
- Top Device Code M29F002BNT: B0h
- Bottom Device Code M29F002BB: 34h
- Bottom Device Code M29F002BNB: 34h
 
SUMMARY DESCRIPTION
The M29F002B is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F002B is fully backward compatible with the M29F002. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards

Tags de M29F002BB70N1: M29F002BB70N1, M29F002B, STMicroeletronics

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M29F002BB70N1 2Mb 256Kb x8 Boot Block Single Supply Flash Memory