Condição de W9425G6JH-5: novo em embalagem comercial

• 2.5V ± 0.2V Power Supply for DDR400
• 2.4V~2.7V Power Supply for DDR500
• Up to 250MHz Clock Frequency
• Double Data Rate architecture; two data transfers per clock cycle
• Differential clock inputs (CLK and NOT CLK )
• DQS is edge-aligned with data for Read; center-aligned with data for Write
• CAS Latency: 2, 2.5, 3 and 4
• Burst Length: 2, 4 and 8
• Auto Refresh and Self Refresh
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = 1
• 7.8-S refresh interval (8K/64 mS refresh)
• Maximum burst refresh cycle: 8
• Interface: SSTL_2
• Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

W9425G6JH-5 Winbond DRAM chip DDR SDRAM 256M-Bit 16Mx16 2.5V

Condição de W9425G6JH-5: novo em embalagem comercial

Tags de W9425G6JH-5: W9425G6JH-5, W9425G6JH5, CMOS DDR SDRAM, 401960-W9425G6JH-5, Winbond Electronics Corp.